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r08ds0017ej0100 rev.1.00 page 1 of 19 nov 10, 2011 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. preliminary data sheet ps9306l,ps9306l2 0.6 a output current, high cmr, igbt gate drive, 6-pin sdip photocoupler description the ps9306l and ps9306l2 are optical coupled isolators containing a gaalas led on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. the ps9306l and ps9306l2 are in 6-pi n plastic sdip (shrink dual in-line package). the ps9306l2 has 8 mm creepage distance. the mount area of 6-pin plastic sdip is half size of 8-pin dip. the ps9306l and ps9306l2 are designed specifically for high common mode transient immunity (cmr) and high switching speed. it is suitable for driving igbts and mos fets. the ps9306l is lead bending type (gull-wing) for surface mounting. the ps9306l2 is lead bending type for long cr eepage distance (gull-wing) for surface mount. features ? long creepage distance (8 mm min.: ps9306l2) ? half size of 8-pin dip ? peak output current (0.6 a max., 0.4 a min.) ? high speed switching (t plh , t phl = 0.4 s max.) ? high common mode transient immunity (cm h , cm l = 25 kv/ s min.) ? embossed tape product : PS9306L-E3, ps9306l2-e3: 2 000 pcs/reel ? pb-free product ? safety standards ? ul approved: no. e72422 ? csa approved: no. ca 101391 (ca5a, can/csa-c22.2 60065, 60950) ? semko approved: no. 1115598 ? din en60747-5-2 (vde0884 part2) approved: no. 40024069 (option) applications ? igbt, power mos fet gate driver ? industrial inverter ? ih (induction heating) r08ds0017ej0100 rev.1.00 nov 10, 2011 1. anode 2. nc 3. cathode 4. v ee 5. v o 6. v cc 64 13 2 5 pin connection (top view) shield
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 2 of 19 nov 10, 2011 package dimensions (unit: mm) lead bending type (gull-wing) for surface mount 0.250.15 9.70.3 3.70.25 0.80.25 0.20.15 7.62 3.50.2 6.80.25 4.580.3 (0.82) ps9306l 0.40.1 0.25 m 1.27 lead bending type (gull-wing) for long creepage distance (surface mount) 0.20.15 ps9306l2 11.50.3 6.80.25 4.580.3 0.250.15 0.750.25 (0.82) 3.70.25 3.50.2 7.62 0.40.1 0.25 m 1.27
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 3 of 19 nov 10, 2011 photocoupler construction parameter ps9306l ps9306l2 air distance (min.) 7 mm 8 mm outer creepage distance (min.) 7 mm 8 mm isolation distance (min.) 0.4 mm 0.4 mm marking example rank code year assembled (last 1 digit) week assembled n 1 31 r 9306 n131 no. 1 pin mark assembly lot type number company initial < r >
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 4 of 19 nov 10, 2011 ordering information part number order number solder plating specification packing style safety standard approval application part number *1 ps9306l ps9306l-ax pb-free 20 pcs (tape 20 pcs cut) standard ps9306l PS9306L-E3 PS9306L-E3-ax (ni/pd/au) embossed tape 2 000 products pcs/reel (ul, csa, semko ps9306l2 ps9306l2-ax 20 pcs (tape 20 pcs cut) approved) ps9306l2 ps9306l2-e3 ps9306l2-e3-ax embossed tape 2 000 pcs/reel ps9306l-v ps9306l-v-ax 20 pcs (tape 20 pcs cut) din en60747-5-2 ps9306l ps9306l-v-e3 ps9306l-v-e3-ax embossed tape 2 000 (vde0884 part2) pcs/reel approved ps9306l2-v ps9306l2-v-ax 20 pcs (tape 20 pcs cut) (option) ps9306l2 ps9306l2-v-e3 ps9306l2-v-e3-ax embossed tape 2 000 pcs/reel note: *1. for the application of the safety standard, following part number should be used. < r >
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 5 of 19 nov 10, 2011 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit diode forward current i f 25 ma peak transient forward current (pulse width < 1 s) i f (tran) 1.0 a reverse voltage v r 5 v power dissipation *1 p d 45 mw detector high level peak output current *2 i oh (peak) 0.6 a low level peak output current *2 i ol (peak) 0.6 a supply voltage (v cc ? v ee ) 0 to 35 v output voltage v o 0 to v cc v power dissipation *3 p c 250 mw isolation voltage *4 bv 5 000 vr.m.s. operating frequency *5 f 50 khz operating ambient temperature t a ? 40 to +110 c storage temperature t stg ? 55 to +125 c notes: *1. reduced to 1.2 mw/ c at t a = 85 c or more. *2. maximum pulse width = 10 s, maximum duty cycle = 0.2% *3. reduced to 4.5 mw/ c at t a = 65 c or more. *4. ac voltage for 1 minute at t a = 25 c, rh = 60% between input and output. pins 1-3 shorted together, 4-6 shorted together. *5. i oh (peak) 0.4 a ( 2.0 s), i ol (peak) 0.4 a ( 2.0 s) recommended operating conditions parameter symbol min. typ. max. unit supply voltage (v cc ? v ee ) 10 30 v forward current (on) i f (on) 8 12 ma forward voltage (off) v f (off) ? 2 0.8 v operating ambient temperature t a ? 40 110 c
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 6 of 19 nov 10, 2011 electrical characteristics (t a = ? 40 to +110 c, v cc = 10 to 30 v, i f (on) = 8 to 12 ma, v f (off) = ? 2 to 0.8 v, v ee = gnd, unless otherwise specified) parameter symbol conditions min. typ. *1 max. unit diode forward voltage v f i f = 10 ma, t a = 25 c 1.2 1.56 1.8 v reverse current i r v r = 3 v, t a = 25 c 10 a input capacitance c in f = 1 mhz, v f = 0 v, t a = 25 c 30 pf detector high level output current i oh v o = (v cc ? 4 v) *2 0.2 a v o = (v cc ? 10 v) *3 0.4 0.5 low level output current i ol v o = (v ee + 2.5 v) *2 0.2 0.4 a v o = (v ee + 10 v) *3 0.4 0.5 high level output voltage v oh i o = ? 100 ma *4 v cc ? 4.0 v cc ? 1.8 v low level output voltage v ol i o = 100 ma 0.4 1.0 v high level supply current i cch i f = 10 ma, i o = 0 ma 0.7 3.0 ma low level supply current i ccl i f = 0 ma, i o = 0 ma 1.2 3.0 ma coupled threshold input current (l h) i flh i o = 0 ma, v o > 5 v 7.0 ma threshold input voltage (h l) v fhl i o = 0 ma, v o < 5 v 0.8 v isolation capacitance c i-o v f = 0 v, f = 1 mhz, t a = 25 c 0.7 pf notes: *1. typical values at t a = 25 c, v cc ? v ee = 30 v. *2. maximum pulse width = 50 s, maximum duty cycle = 0.5%. *3. maximum pulse width = 10 s, maximum duty cycle = 0.2%. *4. v oh is measured with the dc load current in this testing.
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 7 of 19 nov 10, 2011 switching characteristics (t a = ? 40 to +110 c, v cc = 10 to 30 v, i f (on) = 8 to 12 ma, v f (off) = ? 2 to 0.8 v, v ee = gnd, unless otherwise specified) parameter symbol conditions min. typ. *1 max. unit propagation delay time (l h) t plh r g = 47 , c g = 3 nf, 0.05 0.18 0.4 s propagation delay time (h l) t phl f = 10 khz, 0.05 0.18 0.4 s pulse width distortion (pwd) |t phl ? t plh | duty cycle = 50% *2 , 0.25 s propagation delay time (difference between any two products) t phl ? t plh i f = 10 ma, v cc = 30 v ? 0.3 0.3 s rise time t r 50 ns fall time t f 50 ns common mode transient immunity at high level output |cm h | t a = 25 c, i f = 10 ma, v cc = 30 v, v cm = 1.5 kv, v o (min.) = 26 v 25 kv/ s common mode transient immunity at low level output |cm l | t a = 25 c, i f = 0 ma, v cc = 30 v, v cm = 1.5 kv, v o (max.) = 1 v 25 kv/ s notes: *1. typical values at t a = 25 c, v cc ? v ee = 30 v. *2. this load condition is equivale nt to the igbt load at 1 200 v/25 a.
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 8 of 19 nov 10, 2011 test circuit i f = v cc = 0.1 f 4 v i oh 8 to 12 ma 10 to 30 v v o > 5 v i f shield 6 1 2 3 5 4 v cc = 0.1 f 10 to 30 v shield 6 1 2 3 5 4 i f = v cc = 0.1 f 100 ma v oh 8 to 12 ma 10 to 30 v shield 6 1 2 3 5 4 100 ma v cc = 0.1 f 2.5 v 10 to 30 v shield 6 1 2 3 5 4 i ol v cc = 0.1 f 10 to 30 v shield 6 1 2 3 5 4 v ol fig. 1 i oh test circuit fig. 3 v oh test circuit fig. 5 i flh test circuit fig. 6 i cch /i ccl test circuit fig. 4 v ol test circuit fig. 2 i ol test circuit v cc = 0.1 f i ccl : i f = 0 ma i cch : i f = 10 ma 10 to 30 v shield 6 1 2 3 5 4 < r >
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 9 of 19 nov 10, 2011 47 3 nf i f = 10 ma 10 khz 50% duty cycle t phl t plh i f v out 90% 50% 10% t r t f i f a b v cm = 1.5 kv v oh v ol 1 v 26 v v o v o 1 500 v v cm v o t r t f 90% 10% v o v cc = 0.1 f 10 to 30 v shield 6 1 2 3 5 4 v o v cc = 30 v 0.1 f shield 6 1 2 3 5 4 fig. 7 t plh , t phl , t r , t f test circuit and wave forms fig. 8 cmr test circuit and wave forms (switch a: i f = 10 ma) (switch b: i f = 0 ma) + ? remarks 1. common mode transient immunity at high level output is the maximum value of dv cm /dt at which the output remains high level (e.g. v o > 26 v). 2. common mode transient immunity at low le vel output is the maximum value of dv cm /dt at which the output remains low level (e.g. v o < 1.0 v).
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 10 of 19 nov 10, 2011 typical characteristics (t a = 25 c, unless otherwise specified) ?25 25 50 75 125 100 ?50 0 2 06 47 35 30 25 20 15 10 5 7 6 5 4 3 2 1 0 ?25 25 50 75 125 100 ?50 0 v cc = 30 v, v o > 5 v, i o = 0 ma 50 45 40 35 30 25 20 15 10 5 0 25 50 75 125 100 0 25 50 75 125 100 0 300 250 200 150 100 50 0 ambient temperature t a ( c) detector power dissipation p c (mw) detector power dissipation vs. ambient temperature ambient temperature t a ( c) diode power dissipation p d (mw) diode power dissipation vs. ambient temperature forward current i f (ma) output voltage v o (v) threshold input current vs. ambient temperature output voltage vs. forward current forward voltage v f (v) forward current i f (ma) ambient temperature t a ( c) threshold input current i flh (ma) forward current vs. forward voltage high level output voltage ? supply voltage v oh ? v cc (v) ambient temperature t a ( c) high level output voltage ? supply voltage vs. ambient temperature v cc = 30 v v cc = 30 v, i f = 10 ma, i o = ?100 ma 1.0 0.01 0.1 1 10 100 1.2 1.4 1.6 1.8 2.0 2.2 2.4 t a = +110 c +100 c +85 c +50 c +25 c 0 c ?40 c 0 ?0.5 ?1 ?1.5 ?2 ?2.5 ?3 ?3.5 ?4 remark the graphs indicate nominal characteristics. < r >
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 11 of 19 nov 10, 2011 v cc = 30 v, v o = open 3 2.5 2 1.5 1 0.5 0 ?25 25 50 75 125 100 ?50 0 i ccl (i f = 0 ma) i cch (i f = 10 ma) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 ?25 25 50 75 125 100 ?50 0 v cc = 30 v, i f = 0 ma, v ol = 2.5 v 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 v cc = 30 v, i f = 10 ma, (v cc ? v oh ) = 4 v ?25 25 50 75 125 100 ?50 0 high level output current vs. ambient temperature ambient temperature t a ( c) high level output current i oh (a) ambient temperature t a ( c) low level output current vs. ambient temperature low level output voltage vs. ambient temperature ambient temperature t a ( c) high level output current i oh (a) ambient temperature t a ( c) low level output current i ol (a) low level output voltage vs. low level output current high level supply current i cch (ma), low level supply current i ccl (ma) low level output current i ol (a) low level output voltage v ol (v) supply current vs. ambient temperature low level output voltage v ol (v) high level output voltage ? supply voltage v oh ? v cc (v) high level output voltage ? supply voltage vs. high level output current 0 0.1 0.2 0.3 0.4 0.5 0.6 ?25 25 50 75 125 100 ?50 0 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 v cc = 30 v, i f = 0 ma, i o = 100 ma v cc = 30 v, i f = 10 ma v cc = 30 v, i f = 0 ma 0 ?1 ?2 ?3 ?4 ?5 0 0.1 0.2 0.3 0.4 0.5 0.6 4 3 2 1 0 remark the graphs indicate nominal characteristics.
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 12 of 19 nov 10, 2011 0 50 100 v cc = 30 v, i f = 10 ma, c g = 3 nf, f = 10 khz, duty cycle = 50% t phl t plh 0 400 350 300 250 200 150 100 50 0 50 100 0 400 350 300 250 200 150 100 50 0 v cc = 30 v, i f = 10 ma, r g = 47 , f = 10 khz, duty cycle = 50% t phl t plh 15 20 30 25 10 400 350 300 250 200 150 100 50 0 i f = 10 ma, r g = 47 , c g = 3 nf, f = 10 khz, duty cycle = 50% t phl t plh 10 25 20 0 v cc = 30 v, r g = 47 , c g = 3 nf, f = 10 khz, duty cycle = 50% 400 350 300 250 200 150 100 50 0 t phl t plh 400 350 300 250 200 150 100 50 0 v cc = 30 v, i f = 10 ma, r g = 47 , c g = 3 nf, f = 10 khz, duty cycle = 50% ?25 25 50 75 125 100 ?50 0 t phl t plh pwd 10 15 30 25 v o = open 20 3 2.5 2 1.5 1 0.5 0 i cch (i f = 10 ma) i ccl (i f = 0 ma) ambient temperature t a ( c) supply voltage v cc (v) supply current vs. supply voltage high level supply current i cch (ma), low level supply current i ccl (ma) propagation delay time, pulse width distortion vs. ambient temperature supply voltage v cc (v) propagation delay time vs. supply voltage forward current i f (ma) propagation delay time vs. forward current load capacitance c g (nf) propagation delay time vs. load capacitance propagation delay time vs. load resistance load resistance r g ( ) propagation delay time t phl , t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns) propagation delay time t phl , t plh (ns) propagation delay time t phl , t plh (ns) remark the graphs indicate nominal characteristics.
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 13 of 19 nov 10, 2011 taping specifications (unit: mm) PS9306L-E3 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 17.51.0 21.51.0 2.00.1 4.00.1 5.080.1 8.00.1 1.5 +0.1 ?0 1.750.1 4.5 max. 7.50.1 10.20.1 16.00.3 0.35 1.5 +0.1 ?0 4.050.1 outline and dimensions (tape) tape direction outline and dimensions (reel) packing: 2 000 pcs/reel 15.9 to 19.4 outer edge of flange
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 14 of 19 nov 10, 2011 ps9306l2-e3 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 25.51.0 29.51.0 2.00.1 4.00.1 5.080.1 8.00.1 2.0 +0.1 ?0 1.5 +0.1 ?0 4.050.1 1.750.1 4.5 max. 0.35 11.50.1 outline and dimensions (tape) outline and dimensions (reel) tape direction packing: 2 000 pcs/reel 23.9 to 27.4 outer edge of flange 24.00.3 12.00.1
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 15 of 19 nov 10, 2011 recommended mount pad dimensions (unit: mm) part number ps9306l ps9306l2 lead bending a lead bending type (gull-wing) for long creepage distance (surface mount) lead bending type (gull-wing) for surface mount 9.2 10.2 b 1.27 1.27 c 0.8 0.8 d 2.2 2.2 d c b a < r >
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 16 of 19 nov 10, 2011 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temp erature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220 c 180 c package surface temperature t ( c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260 c max. 120 c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) soldering by soldering iron ? peak temperature (lead part temperature) 350 c or below ? time (each pins) 3 seconds or less ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (a) soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) cautions ? fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aware that when voltage is applied suddenly between the photocoupler?s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. < r>
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 17 of 19 nov 10, 2011 usage cautions 1. this product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. board designing (1) by-pass capacitor of more than 0.1 f is used between v cc and gnd near device. also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) when designing the printed wiring board, ensure that the pattern of the igbt collectors/emitters is not too close to the input block pattern of the photocoupler. if the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the igbt output side might affect the photocoupler?s led input, leading to malfunction or degradation of characteristics. (if the pattern needs to be close to the input block, to prevent the led from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the led is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) pin 2 (which is an nc *1 pin) can either be connected directly to the gnd pin on the led side or left open. unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. note: *1. nc: non-connection (no connection). 3. make sure the rise/fall time of the forward current is 0.5 s or less. 4. in order to avoid malfunctions, make sure th e rise/fall slope of the supply voltage is 3 v/ s or less. 5 . avoid storage at a high te mperature and high humidity.
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 18 of 19 nov 10, 2011 specification of vde marks license document parameter symbol spec. unit climatic test class (iec 60068- 1/din en 60068-1) 40/110/21 dielectric strength maximum operating isolation voltage test voltage (partial discharge test, procedure a for type test and random test) u pr = 1.6 u iorm. , p d < 5 pc u iorm u pr 1 130 1 808 v peak v peak test voltage (partial discharge test, procedure b for all devices) u pr = 1.875 u iorm. , p d < 5 pc u pr 2 119 v peak highest permissible overvoltage u tr 8 000 v peak degree of pollution (din en 60664-1 vde0110 part 1) 2 comparative tracking index (iec 60112/di n en 60112 (vde 0303 part 11)) cti 175 material group (din en 60664 -1 vde0110 part 1) iii a storage temperature range t stg ?55 to +125 c operating temperature range t a ?40 to +110 c isolation resistance, minimum value v io = 500 v dc at t a = 25c v io = 500 v dc at t a max. at least 100c ris min. ris min. 10 12 10 11 safety maximum ratings (ma ximum permissible in case of fault, see thermal derating curve) package temperature current (input current i f , psi = 0) power (output or total power dissipation) isolation resistance v io = 500 v dc at t a = tsi tsi isi psi ris min. 175 400 700 10 9 c ma mw < r >
ps9306l,ps9306l2 chapter title r08ds0017ej0100 rev.1.00 page 19 of 19 nov 10, 2011 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, tran sport and dispose of materials that contain arsenic and ot her such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ps9306l,ps9306l2 data sheet description rev. date page summary 0.01 aug 20, 2010 ? first edition issued 1.00 nov 10, 2011 throughout preliminary data sheet data sheet throughout safety standards approved p.3 modification of marking example p.6 modification of electrical characteristics p.8 addition of test circuit fig. 6 p.9 modification of test circuit fig. 7, 8 pp.10 to 12 addition of typical characteristics pp.13, 14 addition of taping specifications p.15 addition of recommended mount pad dimensions p.16 modification of notes on handling p.17 modification of usage cautions p.18 addition of specification of vde marks license document
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(note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2011 renesas electronics corporation. all rights reserved. colophon 1.1

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